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    Lecture 11: Attribute Charts

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    P-chart (fraction non-conforming)C-chart (number of defects)

    U-chart (non-conformities per unit)The rest of the magnificent seven

    Control Charts for Attributes

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    Yield Control

    30201000

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    Months of Production

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    Yield

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    The fraction non-conforming

    The most inexpensive statistic is the yield of the productionline.

    Yield is related to the ratio of defective vs. non-defective,conforming vs. non-conforming or functional vs. non-functional.

    We often measure: Fraction non-conforming (P)

    Number of defects on product (C)

    Average number of non-conformities per unit area (U)

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    The P-Chart

    P{D = X} = nx

    px(1-p)n-x x = 0,1,...,n

    mean npvariance np(1-p)

    the sample fract ion p=Dn

    mean p

    variance p(1-p)n

    The P chart is based on the binomial distribution:

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    The P-chart (cont.)

    p =

    m

    i=1

    p i

    m

    mean p

    variancep(1-p)

    nm

    (in this and the following discussion, "n" is the number ofsamples in each group and "m" is the number of groupsthat we use in order to determine the control limits)

    (in this and the following discussion, "n" is the number ofsamples in each group and "m" is the number of groupsthat we use in order to determine the control limits)

    p must be estimated. Limits are set at +/- 3 sigma.

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    Designing the P-Chart

    p can be estimated:

    p i =D in

    i = 1,...,m (m = 20 ~25)

    p =

    m

    i=1

    p i

    m

    In general, the control limits of a chart are:

    UCL= + k

    LCL= - k

    where k is typically set to 3.

    These formulae give us the limits for the P-Chart (using thebinomial distribution of the variable):

    UCL = p + 3p(1-p)

    n

    LCL = p - 3p(1-p)

    n

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    Example: Defectives (1.0 minus yield) Chart

    "Out of control points" must be explained and eliminated before werecalculate the control limits.

    This means that setting the control limits is an iterative process!

    Special patterns must also be explained.

    "Out of control points" must be explained and eliminated before werecalculate the control limits.

    This means that setting the control limits is an iterative process!

    Special patterns must also be explained.

    30201000.0

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    Count

    LCL 0.053

    0.232

    UCL 0.411

    %

    non-conform

    ing

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    Example (cont.)

    After the original problems have been corrected, thelimits must be evaluated again.

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    Operating Characteristic of P-Chart

    if n large and np(1-p) >> 1, then

    P{D = x} =n

    xpx(1-p) (n-x) ~ 1

    2np(1-p)e

    -(x-np) 2

    2np(1-p)

    In order to calculate type I and II errors of the P-chart weneed a convenient statistic.

    Normal approximation to the binomial (DeMoivre-Laplace):

    In other words, the fraction nonconforming can be treated ashaving a nice normal distribution! (with and as given).

    This can be used to set frequency, sample size and controllimits. Also to calculate the OC.

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    Binomial distribution and the Normal

    bin 10, 0.1

    0.0

    1.0

    2.0

    3.0

    4.0

    bin 100, 0.5

    35

    40

    45

    50

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    60

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    bin 5000 0.007

    15

    20

    2530

    35

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    45

    50

    As sample size increases, the Normal approximation becomes reasonable...As sample size increases, the Normal approximation becomes reasonable...

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    Designing the P-Chart

    = P { D < n UCL /p } - P { D < n LCL /p }

    Assuming that the discrete distribution of x can beapproximated by a continuous normal distribution asshown, then we may:

    choose n so that we get at least one defective with0.95 probability.

    choose n so that a given shift is detected with 0.50

    probability.or

    choose n so that we get a positive LCL.

    Then, the operating characteristic can be drawn from:

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    The Operating Characteristic Curve (cont.)

    p = 0.20,LCL=0.0303,UCL=0.3697

    The OCC can be calculated two distributions areequivalent and np=).

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    In reality, p changes over time

    (data from the Berkeley Competitive Semiconductor Manufacturing Study)

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    The C-Chart

    UCL = c + 3 ccenter at c

    LCL = c - 3 c

    p(x) = e-c cx

    x!x = 0,1,2,..

    = c, 2 = c

    Sometimes we want to actually countthe number of defects.This gives us more information about the process.

    The basic assumption is that defects "arrive" according to a

    Poisson model:

    This assumes that defects are independent and that theyarrive uniformly over time and space. Under theseassumptions:

    and c can be estimated from measurements.

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    Poisson and the Normalpoisson 2

    0

    2

    4

    6

    8

    10

    poisson 20

    10

    20

    30

    poisson 100

    70

    80

    90

    100

    110

    120

    130

    As the mean increases, the Normal approximation becomes reasonable...As the mean increases, the Normal approximation becomes reasonable...

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    Example: "Filter" wafers used in yield model

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    0.1

    0.2

    0.3

    0.4

    0.5Fraction Nonconforming (P-chart)

    FractionNonconforming

    LCL 0.157

    0.306

    UCL 0.454

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    100

    200

    Defect Count (C-chart)

    Wafer No

    NumberofDe

    fects

    LCL 48.26

    74.08

    UCL 99.90

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    Counting particles

    Scanning a blanket monitor wafer.

    Detects position and approximate size of particle.

    x

    y

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    Scanning a product wafer

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    Typical Spatial Distributions

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    The Problem with Wafer Maps

    Wafer maps often contain information that is verydifficult to enumerate

    A simple particle count cannot convey what is happening.

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    Special Wafer Scan Statistics for SPC applications

    Particle Count

    Particle Count by Size (histogram)

    Particle Density

    Particle Density variation by sub area (clustering)

    Cluster Count Cluster Classification

    Background Count

    Whatever we use (and we might have to use morethan one), must follow a known, usable distribution.

    Whatever we use (and we might have to use morethan one), must follow a known, usable distribution.

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    In Situ Particle Monitoring Technology

    Laser light scattering system for detecting particles inexhaust flow. Sensor placed down stream from

    valves to prevent corrosion.

    chamber

    Laser

    Detector

    to pump

    Assumed to measure the particle concentration invacuum

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    Progression of scatter plots over timeThe endpoint detector failed during the ninth lot, and wasdetected during the tenth lot.

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    Time series of ISPM counts vs. Wafer Scans

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    The U-Chart

    We could condense the information and avoid outliers by

    using the average defect density u = c/n. It can beshown that u obeys a Poisson "type" distribution with:

    where is the estimated value of the unknown u.

    The sample size n may vary. This can easily beaccommodated.

    u = u, u2 = unso

    UCL =u + 3

    u

    nLCL =u - 3 un

    u

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    The Averaging Effect of the u-chart

    poisson 2

    0

    2

    4

    6

    8

    10

    Quantiles

    Moments

    average 5

    0.0

    1.0

    2.0

    3.0

    4.0

    5.0

    Quantiles

    Moments

    By exploiting the central limit theorem, if small-sample poisson variablescan be made to approach normal by grouping and averaging

    By exploiting the central limit theorem, if small-sample poisson variablescan be made to approach normal by grouping and averaging

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    Filter wafer data for yield models (CMOS-1):

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    0.2

    0.3

    0.4

    0.5

    Fraction Nonconforming (P-chart)

    FractionNonconforming

    LCL 0.157

    0.306

    UCL 0.454

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    0

    100

    200

    Defect Count (C-chart)

    NumberofDefects

    LCL 48.26

    74.08

    UCL 99.90

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    2

    3

    4

    5

    6

    Defect Density (U-chart)

    Wafer No

    DefectsperUnit

    LCL 1.82

    2.79

    UCL 3.76

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    The Use of the Control Chart

    The control chart is in general a part of the feedback loopfor process improvement and control.

    ProcessInput Output

    Measurement System

    Verify andfollow up

    Implementcorrective

    action

    Detectassignablecause

    Identify rootcause of problem

    S

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    Choosing a control chart...

    ...depends very much on the analysis that we arepursuing. In general, the control chart is only a small

    part of a procedure that involves a number of statisticaland engineering tools, such as:

    experimental design

    trial and error

    pareto diagrams

    influence diagrams

    charting of critical parameters

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    The Pareto Diagram in Defect Analysis

    figure 3.1 pp 21 Kume

    Typically, a small number of defect types is responsiblefor the largest part of yield loss.

    The most cost effective way to improve the yield is to

    identify these defect types.

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    Pareto Diagrams (cont)

    Diagrams by Phenomena

    defect types (pinholes, scratches, shorts,...) defect location (boat, lot and wafer maps...) test pattern (continuity etc.)

    Diagrams by Causes

    operator (shift, group,...) machine (equipment, tools,...)

    raw material (wafer vendor, chemicals,...) processing method (conditions, recipes,...)

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    Example: Pareto Analysis of DCMOS Process

    viouslayer

    sproblem

    s

    scratches

    ntaminatio

    n

    edcontacts

    rnbridging

    separticles

    othe

    rs

    0

    20

    40

    60

    80

    100

    occurence

    cummulative

    DCMOS Defect Classification

    Percentage

    Though the defect classification by type is fairly easy, the

    classification by cause is not...

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    Cause and Effect Diagrams

    figure 4.1 pp 27 Kume

    (Also known as Ishikawa,fish boneor influencediagrams.)

    Creating such a diagram requires good understanding ofthe process.

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    An Actual Example

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    Example: DCMOS Cause and Effect Diagram

    Past Steps Parametric Control Particulate Control

    Operator Handling Contamination Control

    inspection

    rec. handling

    transport

    loading

    chemicals

    utilities

    cassettes

    equipment

    cleaning

    vendor

    Wafers

    Defect

    skill

    experience

    vendor

    calibration

    SPC SPC

    boxes

    shift

    monitoring

    automation

    filters

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    Example: Pareto Analysis of DCMOS (cont)

    equip

    mnet

    utilities

    lo

    ading

    inspe

    ction

    smiffboxes

    o

    thers

    0

    20

    40

    60

    80

    100

    occurence

    cummulative

    DCMOS Defect Causes

    percentage

    Once classification by cause has been completed,we can choose the first target for improvement.

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    Defect Control

    In general, statistical tools like control charts must becombined with the rest of the "magnificent seven":

    Histograms

    Check Sheet

    Pareto Chart

    Cause and effect diagrams

    Defect Concentration Diagram

    Scatter Diagram Control Chart

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    Logic Defect Density is also on the decline

    Y = [ (1-e-AD)/AD ]2

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    What Drives Yield Learning Speed?