new pvd systems for advanced memory applications
TRANSCRIPT
External Use
New PVD Systems for Advanced
Memory Applications
Wei Chen, Ph.D.
Global Product Manager | Metal Deposition Products
11/14/2019 @ AVS Thin Film Users Group (TFUG)
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2017 2018E 2022E
2
Challenges to Chip Performance, Power and Cost
Current Computing Architectures are Not Sustainable
>4
2.5
2
1.8
14 to10nm
22 to14nm
32 to22nm
45 to32nm
SOURCE: Bernstein
Time Between LogicNodes in Years
Performance Improvements Over Time (vs. Vax-11/780)
100,000
10,000
1,000
100
10
1978
1986
2003
2011
2015
201825%
per year
52%per year
23%per year
12%per year
3.5%per year
End of Dennard Scaling
Limits of parallelism of Amdahl’s Law
End of Moore’s Law
VAX-11/780
SOURCE: Computer Architecture: A Quantitative Approach, Sixth Edition, John Hennessy and David Patterson, December 2017
1.5ZB2ZB
>10ZB
SOURCE: Applied Materials model based on forecasts published by Cisco, Intel, Western Digital
Dramatic Slowdown of Moore’s Law ScalingIoT and Industry 4.0 Creating
an Explosion of Data
Humans
Machines
Inflection YearData Generated by Machines > Humans
53% 44% <10%
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AI – Big Data Driving a Renaissance of Hardware
Development and Investment
INITIAL
DEPLOYMENT CLOUD EDGE
AcceleratorsGPU, TPU, ASICS, FPGAs
Now ✓ Autos
Near MemoryDDR, SRAM, HBM, NAND, SCM
Now to 2 years ✓ ✓
New MemoryMRAM, ReRAM, PCRAM, FeRAM
Now to 5 years ✓ ✓
In-Memory ComputeAnalog, ReRAM, PCRAM
2 to 5 years ✓ ✓
Novel HPCQuantum, Synaptic
5 to 10 years ✓ ✓
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MRAM PCRAM and ReRAMMagnetic Random Access Memory Phase Change RAM and Resistive RAM
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CloudEdge
5
New Memory Technologies Improve Computing Efficiency
New Memories Boost Computing Efficiency at Both Edge and Cloud
Logic
SRAM
Flash
PPAC
POWER
PERFORMANCE
AREA-COST
PPAC
POWER
PERFORMANCE
AREA-COST
Logic
SRAM
MRAM
CPU/
Accelerator
DRAM
SSD/HDD
CPU/
Accelerator
DRAM
SSD/HDD
PCRAM
ReRAM
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New Memory Accelerates PPAC Gains
PPAC
POWER
PERFORMANCE
AREA-COST
PPAC
POWER
PERFORMANCE
AREA-COST
Ch
ip S
ize
Memory Density
SRAM
MRAM
Pow
er
eFlash+SRAM MRAM
1x
2-10x
DOI: 10.3390/jlpea4030214DOI: 10.1109/IEDM.2015.7409770
Co
st/
Bit
DRAM SCM
1x
~0.6x
Optane DC persistent memory spec from Intel.com
Sp
ee
d (W
rite
)
NAND SCM
>10x
1x
Edge (eNVM – MRAM)
Cloud (SCM – PCRAM/ReRAM)
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Deposition Challenges of MRAM Manufacturing
7
▪ Ultra-high purity environment for pristine film
and interface
▪ Complex cell stack
► Complex stack: 10+ materials with 30+ layers
► Ultrathin film in the range of a few angstroms
▪ High quality tunnel barrier
► Critical for high on/off signal and endurance
▪ Special treatments
► Surface preparation, thermal treatment for optimal performance
▪ Repeatability in HVM
Reference Layer
Free Layer
Electrode
Electrode
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Solution: Endura® Clover™ MRAM PVD System
8
▪ Ultra-high purity environment for pristine film
and interface → UHV platform (low E-9)
▪ Complex cell stack → Multi-cathode Clover PVD chamber
► Complex stack: 10+ materials with 30+ layers
► Ultrathin film in the range of a few angstroms
▪ High quality tunnel barrier → Clover PVD RF-MgO chamber
► Critical for high on/off signal and endurance
▪ Special treatments → Cooling/Anneal chambers
► Surface preparation, thermal treatment for optimal performance
▪ Repeatability in HVM → OBM real-time monitoring
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30+ Layers, 10+ Materials in Single Integrated System
Most Sophisticated System Ever Created by Applied Materials
Bottom
Electrode
Reference
Layer
MgO
Barrier
Free
Layer
Top
Electrode
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Clover PVD Designed for Complex MRAM Deposition
Unique Addition to Applied’s PVD Leadership
Sub-Angstrom Uniformity
Sharp Atomic Interface
No Cross-Contamination
Up to Five Materials in One Chamber
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Clover PVD MgO Delivers Superior MRAM Results
Performance(Improved Texture and Interface)
Low Power and High Endurance are Ideal for Edge Devices
Endurance(High-Quality MgO Barrier)
(Ceramic Sputtering)(Metal Deposition + Oxidation) (Ceramic Sputtering)(Metal Deposition + Oxidation)
Alternative MgO Clover PVD MgO Clover PVD MgOAlternative MgO
Applied Internal Data Applied Internal Data
>100X+20%
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Deposition Challenges of PCRAM& ReRAM ManufacturingP
CR
AM
ReR
AM
Electrode
Electrode
Selector
Memory
Electrode
Electrode
Electrode
Selector
Memory
Electrode
▪ Safe handling of sensitive material deposition and preventive
maintenance
▪ Composite sputtering
► Compositional uniformity within wafer and within kit life
▪ Low defectivity
▪ Damage-free integrated stack
► Minimal plasma damage and intermixing of materials
▪ Repeatability in HVM (repeatability and cost)
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Solution: Endura® Impulse™ PVD System
▪ Safe handling of sensitive material deposition and preventive
maintenance → Effective passivation
▪ Composite sputtering → Impulse PVD
► Compositional uniformity within wafer and within kit life
▪ Low defectivity → Large portfolio of coating technologies
▪ Damage-free integrated stack → Magnet turning
► Minimal plasma damage and intermixing of materials
▪ Repeatability in HVM → OBM real-time monitoring
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On-Board Metrology Enables Precise Thickness Control
▪ Enables real-time process monitoring and control
▪ Measures delicate films under vacuum
▪ Achieves faster ramps, better yields for production
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Product Excursion Detection Comparison
70% Yield (Delayed detection)
50% Yield (No detection)
90% Yield (OBM real-time detection)
Excursion Starting Point
Industry’s Only On-Board Metrology with 1/100th of a Nanometer Resolution
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Summary
▪ Explosive growth in data just as Moore’s Law is slowing down
▪ New-memories improve computing efficiency in the Edge
and the Cloud
▪ Manufacturing challenges with complex materials have
previously limited new memory adoption
▪ Innovative PVD technologies enable high-volume
manufacturing with higher performance films
▪ On-board metrology improving learning rates and yield by
reliably measuring films that can not be otherwise be measured
▪ High-volume manufacturing systems are shipping today for
MRAM, PCRAM and ReRAM
