suitable is the best. about allwin21 corporation allwin21 corp. was formed in 2000 to provide rapid...

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About Allwin21 Corporation

Allwin21 Corp. was formed in 2000 to provide Rapid Thermal

Process, Plasma Asher Stripper Descum, Plasma Etch/RIE/ICP,

Sputtering and Evaporator System, Metrology and Tester high-

tech equipment, services and technical support in Semiconductor

industry, MEMS, Biomedical, Nanotechnology, Solar, LEDs etc.

Located in Santa Clara, the heart of Silicon Valley, Allwin21 has

been providing unique technical support, high quality equipment

and fast supplied spare parts worldwide. We have maintained a

global presence that has grown and expanded. into the major high-

tech manufacturing areas of the world. We pride ourselves on

developing lasting customer and client relationships.Allwin21 is

proud to announce it is certified as ISO 9001:2008 compliant

organizations.

Allwin21 Mission Statement

• To deliver unique, high value-added solutions to our customers, using Allwin21's proven products that are leveraged by our innovative technologies.

• We are dedicated to providing unique solutions that enable new processes, improve yield, increase uptime, reduce maintenance costs, and extend life of capital equipment.

Professionally provide advanced high-tech equipment suitable to customer preferences and needs

Company Distribution

Allwin21 CorpBeijing.

Allwin21 CorpUSA

Japan

Korea

Headquarter

Subcompany or office

Agents

Allwin21 CorpNanjing

Taiwan

Britain France Germany Israel

India Vietnam

Poland

Brazil Singapore

Allwin21 Main Customers

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Innovative Technologies • Process development and enhancement

– Combined 30 years of process experience

• System control on board/component level– Superior customer support

• Advanced AW Software for each equipment– User-friendly with excellent customer reception– Enhanced automated system diagnostics for better

serviceability– Integrated process control system – Real time graphics display – Real time process data acquisition, display, and analysis – Programmed comprehensive calibration and diagnostic

functions – Better performance and maintenance than the original

systems

• Precise Temperature Control Technology– Much better uniformity– Much better repeatability

Main Products and Services

• Equipment

– Rapid Thermal Process– Plasma Asher Descum– Plasma Etch RIE ICP– Sputtering System– Metrology & E-Tester

• Services–Refurbishment–Upgrade–On site service

• Spare parts

http://www.allwin21.com/Item.asp?catid=34&id=156

http://www.allwin21.com/upload/File/Matrix%20105R%20Plasma%20Descum%20Asher%20Description-Peter.pdf

http://www.allwin21.com/upload/File/AccuSputter%20AW%204450%20Sputter%20Deposition%20Description.pdf

http://www.allwin21.com/tegal-plasma-etcher.asp

Thin Film Deposition Technology Physical Vapor Deposition (PVD)-Film is formed by atoms directly transported from source to the substrate through gas phase

EvaporationThermal evaporationE-beam evaporation

SputteringDC Diode sputteringDC Magnetron sputteringRF Diode sputteringRF Magnetron sputteringReactive sputtering

Chemical Vapor Deposition (CVD)-Film is formed by chemical reaction on the surface of substrate

Low-Pressure CVD (LPCVD) Plasma-Enhanced CVD (PECVD) Atmosphere-Pressure CVD (APCVD) Metal-Organic CVD (MOCVD)

OxidationSpin CoatingPlatting

General Characteristics of Thin Film Deposition• Deposition Rate• Film Uniformity

Across wafer uniformity Run-to-run uniformity

• Materials that can be deposited Metal Dielectric Polymer

• Quality of Film –Physical and Chemical Properties Stress Adhesion Stoichiometry Film density, pinhole density Grain size, boundary property, and orientation Breakdown voltage Impurity level

•Deposition Directionality Directional: good for lift-off, trench filling Non-directional: good for step coverage

•Cost of ownership and operation

Comparison of Thin Film Deposition Technology

Sputtering Deposition

• Sputtering is a term used to

describe the mechanism in

which atoms are ejected

from the surface of a

material when that surface is

stuck by sufficiency

energetic particles.

• Alternative to evaporation.

• First discovered in 1852,

and developed as a thin film

deposition technique by

Langmuir in 1920.

Why purchase Allwin21 Sputtering Deposition Systems?

Description

Quality 20 years proven true “work horse” systems Made in U.S.A Thousands units in fabs/labs Better Performance Advanced AW Software with precise control technology

Cost Lowest ownership cost Different models and configurations for different applications and budgets

Delivery Industry-leading 8 to 12 weeks lead time

Service* Local engineers trained by U.S.A engineers Phone and email support by U.S.A engineers in local language U.S.A. engineers can provide on site support in 72 hours if necessary.

Relationship

We have been looking for Win-Win-Win relationship with our customers; We pride ourselves on developing lasting customer and client relationships.

* BE RESPONSIBLE BY OUR LOCAL REP.

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All specification and information here are subject to change without notice and can not be used for purchase and facility plan.

Allwin21 Sputter Deposition System Models AccuSputter AW 4450 Series

-Brand New Sputter deposition systems with load lock and all

different configuration.

Perkin-Elmer 4400 Series

-Fully refurbished and upgraded sputtering deposition systems

with load lock.

Perkin-Elmer 4400 : 1 to 4 round cathodes

Perkin-Elmer 4410 : 1 to 3 Delta cathodes

Perkin-Elmer 4450 : 1 to 3 Delta cathodes and Turbo pump

Perkin-Elmer 4480 : 1 to 3 Delta cathodes and Turbo Pump

and automatic wafer transfer

Perkin-Elmer 2400 Series

-Fully refurbished and upgraded sputtering deposition systems

without load lock.

BudgetThroughputSputter RateMaterial AmountUniformityQuality of Film




http://www.allwin21.com/perkin-elmer-sputtering.asp


AW Sputter Deposition System Structure



Sputter Deposition Load Lock and Chamber and Hoist



AW Sputter Deposition Load Lock and Chamber



AW Sputter Deposition AW Controller


AW Sputter Deposition AW Controller-2


AW Sputter Deposition System LayoutUtilities:

· Rear-mounted electrical, water, gas and LN2 inlet panel

· Power distribution box· Water flow switch panel

and manifold· 10kW DC power supply:

208VAC, 60Hz, 3phases, 60A, 4 wires

· Vacuum system: 208VAC, 60Hz, 3phases, 60A, 5 wires

· Cooling Water: 1.8gpm3· Process N2: 60-70 psi· Process Argon: 5-10 psi· CDA: 40-60 psi

Dimensions and Weight:

Width: 65.000 in (165.1 cm)

Depth: 46.000 in (116.8 cm)

Height: 68.000 in (172.7 cm)

Weight: 2,288 lb (1,038 kg)


AW Sputter Deposition System Key Features Advanced AccuSputter ® AW4450 Controller with GUI

mounted in the main frame; Manual, Semi and Automatic one button operation; Customer programming of recipe for process

parameters. GEM/SEC II functions (Optional) 24V DC control components DC Gear Motors for table rotate and carriage moving; Advanced vacuum gauges and control system; MFC gas control system; Advanced RF automatically matching network; DC and RF power are mounted in the main frame; Fast Cycle Load Lock Operation ; High rate DeltaTM DC magnetron sputtering; High throughput operation: Automated load lock and

controller sequences provide for efficient pump down

and pallet transfer to process chamber High uniformity: ±7% deposition uniformity

guaranteed with water-cooled rotating annular

substrate table; ±5% achievable.

Ultra-clean vacuum: Cryopumped and

Meissner-trapped process chamber ensures

contamination-free conditions especially

important for critical processes such as the

deposition of aluminum and platinum; Easy maintenance: Removable deposition

shields permit easy system cleaning.

Automatic cryopump regeneration minimizes

downtime and inconvenience; Specialized pallets for ease of substrate

leading/unloading; "Drop in" target for quick target changes, no

screw to both with; "Snap-out" deposition shields for quick, easy

maintenance; Fail-safe system protection


AW Sputter System Configuration-Chamber28" diameter X 12" high stainless steel cylinder with 6" CF flange viewport and

load lock port28" diameter stainless steel top plate with 3 delta cathode ports. Adaptor for 8-inch

or 6-inch target is optional.28" diameter stainless steel base plate

11/2" air-operated roughing isolation valve

Air-operated gas inlet valveAir-operated vent valve

11/2" blanked-off leak check port

Removable deposition shields23" diameter, 3-position water-cooled annular

substrate table with variable-speed motorized table driveFull circle shutter with vane shutterChain drive pallet carrier transportHeavy duty electric hoist



AW Sputter System Configuration-Load Lock

30" x 28" x 8" stainless steel load

lock chamber with aluminum

cover

2" air-operated roughing isolation

valve

Air-operated vent valve

23" diameter molybdenum

annular substrate pallet

Pallet carrier and chain drive

transport



AW Sputter System Configuration-VacuumRoughing36.7 cfm mechanical pump for process chamber and load lock roughing2" diameter roughing lines with electro-pneumatic valveSurface-area Versa-trapTM in roughing lineHigh vacuum pumping2 stage cryopump with 1000 l/s pumping speed for air, including chevron, water-cooled compressor and lines, automatic regeneration controller and plumbing kit.71/2" O.D. (6" ASA) aluminum air-operated gate valveAir-operated venetian blind throttling valveResidual gas pumpingFull flood Meissner trap with 30,000 l/s pumping speed for water vaporInsylated LN2 linesLN2 sensor, solenoid and relief valveControlVacuum gauging package including basic digital vacuum gauge control, ionization tube and two thermal tubesAutomatic pump-down controllerAutomatic lock controllerOptionsLoad lock Hi-VAC pump-Turbo Pump


Typical Deposition MaterialsAl+W Cr/SiO2 SiC Ti+AuAl+Ti/W+Ag InSnO SiO2 Ti+Au+Ni

Al2O3 Mo SiO2+O2 Ti/WAg MoSi2 Si+N2(Si3N4) Ti/W+Au

Au Mo2Si5 Si+N2+B4C Ti/W+Au+Ta

C Mo5Si3 Ta Ti/W+Al/Si

Cr Ni TaC Ti/W+Ni/Cr+Au

Cr/Co Ni/Cr Ta+Au Ti/W+PtCr/Au Ni+Ni/Cr TaSi2 WCr+Cu Ni/Fe Ta+SiO2

Cr/Si Ni/Fe+Cu+SiO2 TiO2 Zn

Cr/SiO Pt TiO2+Cr ZnO2

Zr


Batch Throughput and Substrate

Customized

Target ShapeTarget SizeThroughputUniformityQuality of Film


Typical ThroughputPERFORMANCE FOR TYPICAL METALLIZATION PROCESS-100mm WAFERS

Standard Delta System High Throughput Delta Systems

Pallet capacity 14 22Uniformity +/-7%(63/4") band +/-5%(73/4" band)

+/-7%(8" band)Typical Target Life 3220 wafers 4070 wafersTypical Deposition Rate 200 Angstroms/kw-min 170 Angstroms/kw-minTypical Deposition time 5 minutes 5.9 minutes*Runs per hour 4.0 3.8Throughput 56 wafers/hour 83 wafers/hour* Assumes 10 minute pumping, wafer exchange and venting cycle, some processes require pre-heating, extending the loading cycle by as much as 5 minutes.


Target Cathodes-Amount

Up to 4 Up to 3

Material AmountUniformitySputter RateThroughputQuality of FilmBudget


Cathode Type for Different Sputter TypesDC RF Pulse DC

Diode Metal Metal /Dielectric

Metal /Dielectric

Magnetron Metal Metal /Dielectric

Metal /Dielectric

MaterialUniformitySputter RateThroughputQuality of FilmBudget


Can be for 8 inch or 6 inch circular target with special adaptor.

8 inch6 inchCustomized ,such as 2 inch, 3 inch, 4 inch, 5 inch

Cathodes for Different Target Shape and Size

Target CostUniformitySputter RateThroughputQuality of FilmBudget


Typical Deposition Materials and Sputter RatesA

ngstrom

s/min

/kw

Material Delta(1)

RF DiodeDelta(1)

RF MagnetronDelta

DC Magnetron

Ag 480Al 200Al2O3

(3) 40Au 400Cr 180CrNx 160CrSi2 125Cu 80 320Mo 220MoSi2 150Ni(2)

Nichrome 125Pd 390Permalloy(2)

Pt 280Quartz(3) 25 50Si(3) 90Si3N4

(3) 30Ta 150TaNx 140Ti 140TiNx 125Ti/W(10%) 150W 150Wnx 125


Typical Deposition Materials and Sputter Rate

The seller is neither responsible for any customers' applications and processes nor for any production loss due to machine failure, damage, or shut-down by any causes.

Rates shown above are given in angstroms/min/kw, and are typical only. Actual

rates for any given system will depend upon process and system parameters.

Rates are approximately linear with applied power except where otherwise

indicated. Some materials, due to their nature, are limited to power levels

substantially less than the maximum power ratings for each cathode type.

1 Insufficient data available for most materials with RF Delta operation - DC

magnetron recommended for metals.

2 Ferromagnetic materials - magnetron mode is possible with thin targets only but

not recommended.

3 Dielectric materials - require the use of RF power. Rates are non-linear.


Sputter Uniformity and Quality of Film

Wafer Size Loading Capacity

Deposition UniformityStd Delta High Perf. Delta

3inch 30 +/-7% +/-5%100mm 22 N/A +/-5%

14 +/-7% +/-4%13 +/-5% +/-4%

125mm 10 +/-7% +/-5%9 +/-4% +/-4%

150mm 8 +/-12% +/-5%7 +/-7% +/-4%

8inch 5 +/-14% +/-7%


RF Etch and RF Bias FunctionEF Etching: Essentially the reverse process of RF diode sputter

deposition, in which the substrate table becomes the cathode (negative

pole) and the target assembly becomes the anode (positive pole). Under

these circumstances, surface material from the substrates is ejected.

Surface impurities are ejected along with substrates material, making

this process useful for pre-cleaning substrate prior to sputter deposition.

In order to prevent ejected material from contaminating the target, s

shutter is positioned between target and substrate.

Bias sputtering: Combines the DC or RF sputtering and the RF

etching operations. While DC or RF power is applied to the target, a

small amount of RF is also applied to the substrate table. As a result,

the substrate and target are both bombarded by ions ( the substrate to a

lesser extent than the target ). In many applications this process yields

superior quality films than can be attained using DC or RF sputtering

with grounded substrates. Bias sputtering influences the crystal

structure, and tends to re-sputter trapped argon from the growing film

during deposition and rearrange individual atoms of the sputtered

material; this improves stoichiometry and step coverage. Bias

sputtering can be used to adjust film resistivity and film stress to

desired levels.


DC Power and RF Power

DC Sputter

RF Sputter RF Etch RF Bias

Round Cathodes

1-5KW 1-2KW 0.3-1.2KW 0.3-1.2KW

Delta Cathodes

1-10KW 1-3KW 0.3-1.2KW 0.3-1.2KWBudgetMaterialSputter RateThroughputQuality of Film


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Process Gases

100 SCCM Ar

100 SCCM N2100 SCCM O2Customized

OPTIONALAll specification and information here are subject to change without notice and can not be used for purchase and facility plan.

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Typical Process Data-1High quality metal films can be routinely achieved:Material:Al-1%SiPower:9kwTable rotation:10 rpmArgon pressure:8 mTorrFilm thickness:1.04 micronsDeposition time:5.8 minutesStep height: 1.10 micronsStep slope: 80o

Step coverage: 62% horizontal-to-verticalSpecularity: 65-75%Resistivity: 2.85μΩ-cmGrain size:2 microns


Typical Process Data-2Delta Cathode SystemsMaterial Al/1%Si Al/1%Si/2%Cu Al/4%CuDC Power 10 kw 10 kw 10 kwBase Pressure 5X10-7 Torr 5X10-7 Torr 5X10-7 TorrPumpdown Time 3.5 min. 3.5 min. 3.5 minArgon Pressure 8X10-3 Torr 8X10-3 Torr 8X10-3 TorrTable Rotation 2-5 rpm 2-5 rpm 2-5 rpmDeposition Rate 2000 Å /min 2000 Å /min 2000 Å /minFilm Thickness 1.0 microns 1.0 microns 1.0 micronsStep Hight 1.0 microns 1.0 microns 1.0 micronsStep Slop/Coverage 70o/70% 70o/70% 70o/70%

80o/60% 80o/60% 80o/60%90o/50% 90o/50% 90o/50%

Specularity 70-75% 80-85% 90-95%Resistivity 2.85-2.90μΩ-cm 2.95-3.00μΩ-cm 2.95-3.00μΩ-cmGrain Size 1-2μm 0.3-0.5μm 0.3-0.5μFilm Hardness(Annealed)

85kg/mm2 100kg/mm2 120kg/mm2

CV Shift 0.25V 0.15V 0.15V*Uniformity +/-7% +/-7% +/-7%* Typical results with Standard Delta Cathodes. Higher uniformity and throughput can be achieved with high performance Delta Cathodes and high throughput option. Throughput is process dependent and may vary depending on etch and pre-heat cycles.


Other Optional Accessories and functions


RF BiasCo-SputterLoad Lock Radiant Heat (Up to 200C)In Process Radiant Heat (Up to 350C)Turbo Pump for Load Lock

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QuestionnaireQuestions Feedback

Budget

Sputter Material, Sputter Rate, Sputter Uniformity and Quality of Film Spec.

Throughput

Wafer Size, Material, Shape

Target Cathode Amount, Type, Shape, Size

RF Etch Function

DC Power and RF Power capability

Process Gas and MFC range

Turbo Pump

Mechanical Pump

Typical Process Recipe

Special Requirements

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Contact UsAddress:3521 Leonard Court ,Santa Clara,CA95054,U.S.A.

Telephone:1-408-988-5188

Fax:1-408-904-7168

E-mail: [email protected]

Website: www.allwin21.com


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