HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014o

HV-CMOS Hybridization

G. Darbo – INFN / GenovaFuture Pixel Chip Design – Vidyo 18 Mar 2014

On Behalf of Genova ATLAS Pixel& Genova Low Temperature Detector (LTD) Lab

Indico agenda:https://indico.cern.ch/event/289724/

HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 2

How to Glue HV2FEI4 to FE-I4Requirements:

• Thin uniform dielectric layer (5 µm?) • Precise alignment of the two chips (bumps are 18µm diameter and minimum

50µm pitch on FE-I4 side)

Issues on “glue & press”• Difficult to keep parallelism• Difficult to keep calibrated spacing

(~impossible once HV-CMOS reachesfull size)

• How to align chips in XY (if capacitors are not cantered cross-talk)

FE-I4 CHIP

FE-I4 CHIP

HV2FEI4Apply pressure

Deposit Glue

HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 3

CCPD HV-CMOS - HybridizationHow to improve – process steps:• Use spacers: patterned photoresist pillars on FE-I4• Spin SU-8 photoresist (rad-hard) on FE-I4 to desired

thickness • Use mask for making pillars and clean rest of the surface• Apply glue (or SU-8 again) to have a thin layer• Apply pressure until pillars are in contact with HV2FEI4• Test done – see talk at 9th Trento WS by M. Biasotti:

http://indico.cern.ch/event/273880/session/5/contribution/68/material/slides/0.pdf

The tiny HV2FEI4p1 prototype glued on the large FE-I4

HV2FEI42.2 × 4.4 mm2

60 columns × 24rows

FE-I4

R/O CHIP

R/O CHIP

Spin SU-8 photoresistPattern pillars by mask

Glue deposition

R/O CHIPDETECTOR CHIPAlign & pressure

Pillar 1 5.92

Pillar 2 6.07

Pillar 3 5.92

Pillar 4 5.92

2x2 pillar height test: - distance 4 mm - height in µm

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HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 4

How Genova May Contribute to CCPD Hybridization

Genova has expertise and instruments• >20 years development of pixel detectors (ATLAS) and

low temperature detectors (LTD)• Process on dies (not full wafer)• We may consider to do more than gluing – look at the

combined facilities at the same department floor!

Collaboration between • ATLAS Pixel Lab (APL)• Low Temperature Detector (LTD)

Genova Lab (see next slides)

ATLAS Pixel Lab (Genova) – APL

KLA-TENCOR P7 stylus profilerScan length: 150mm - 6” waferRepeatability/reproducibility: 4/15 ÅVertical resolution: 0.01/0.60 Å

Manual flip-chip machine

HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 5

Micro-fabrication and Thin Film Facility - Genoa LTD Lab

Class1000-CR for lithography

PLD film deposition

Laser shot for Ir, W, Re deposition

TES on SiN membrane

Thin Film Growth Systems2 E-guns 4 material each @ 10-9 mbar

2 AC & 1 DC Magnetron Sputtering Systems

Pulsed Laser Deposition System @ 10-10 mbar

Micro-fabricationReactive Ion Etching, Plasma & Wet etching

2 Mask Aligners, Oxygen Plasma & Ion Beam

Critical Point Dryer

HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 6

Bolometer for 145 GHz-Back etched and spiderweb shaped SiN membrane

on Si wfr

250 µm

10 µm

Cryogenic Silicon Ballistic Phonon detector for GeV cosmic protons for L2

orbit payload

5 µm

Micro-fabrication and Thin Film Facility - Genoa LTD Lab

HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 7

Next StepsTry pillars technique on full size 2x2 cm2

• Glue face-to-face FE-I4 to FE-I4• Deposit SU-8 on FE-I4, mask off and leave columns, measure height• Glue and align second FE-I4 using manual flip-chip machine• Make sections and measure thickness

Then…• … proceed with functional components